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irfr5305pbf irfu5305pbf hexfet ? power mosfet fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet ? power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. parameter max. units i d @ t c = 25 c continuous drain current, v gs @ -10v -31 i d @ t c = 100 c continuous drain current, v gs @ -10v -22 a i dm pulsed drain current -110 p d @t c = 25 c power dissipation 110 w linear derating factor 0.71 w/ c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 280 mj i ar avalanche current -16 a e ar repetitive avalanche energy 11 mj dv/dt peak diode recovery dv/dt -5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbfin (1.1nm) absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 1.4 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient** ??? 110 thermal resistance ultra low on-resistance surface mount (irfr5305) straight lead (irfu5305) advanced process technology fast switching fully avalanche rated lead-free description 12/13/04 d-pak i-pak irfr5305 irfu5305 pd-95025a v dss = -55v r ds(on) = 0.065 ? i d = -31a s d g www.kersemi.com 1
irfr/u5305pbf 2 www.kersemi.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.3 v t j = 25c, i s = -16a, v gs = 0v t rr reverse recovery time ??? 71 110 ns t j = 25c, i f = -16a q rr reverse recovery charge ??? 170 250 nc di/dt = -100a/s source-drain ratings and characteristics parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 ??? ??? v v gs = 0v, i d = -250 a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.034 ??? v/ c reference to 25 c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.065 ? v gs = -10v, i d = -16a v gs(th) gate threshold voltage -2.0 ??? -4.0 v v ds = v gs , i d = -250 a g fs forward transconductance 8.0 ??? ??? s v ds = -25v, i d = -16a ??? ??? -25 a v ds = -55v, v gs = 0v ??? ??? -250 v ds = -44v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 63 i d = -16a q gs gate-to-source charge ??? ??? 13 nc v ds = -44v q gd gate-to-drain ("miller") charge ??? ??? 29 v gs = -10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 14 ??? v dd = -28v t r rise time ??? 66 ??? i d = -16a t d(off) turn-off delay time ??? 39 ??? r g = 6.8 ? t f fall time ??? 63 ??? r d = 1.6 ?, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 1200 ??? v gs = 0v c oss output capacitance ??? 520 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 250 ??? ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? ns 4.5

repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd -16a, di/dt -280a/ s, v dd v (br)dss , t j 175 c notes: v dd = -25v, starting t j = 25 c, l = 2.1mh r g = 25 ? i as = -16a. (see figure 12) pulse width 300 s; duty cycle 2%. -110 s d g s d g this is applied for i-pak, l s of d-pak is measured between lead and center of die contact. uses irf5305 data and test conditions.
irfr/u5305pbf www.kersemi.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 10 0 d ds 20s pulse width t = 25c c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 1 10 100 1000 0.1 1 10 10 0 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 175c c 1 10 100 45678910 t = 25c j t = 175c j a v = -25v 20s pulse width ds gs -v , gate-to-source voltage (v) d -i , drain-to-source current (a) 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -27a v = -10v d gs
irfr/u5305pbf 4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 500 1000 1500 2000 2500 1 10 100 c, capacitance (pf) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss ds -v , drain-to-source voltage (v) 0 4 8 12 16 20 0 102030405060 q , total gate charge (nc) g a for test circuit see figure 13 v = -44v v = -28v i = -16a gs -v , gate-to-source voltage (v) d ds ds 10 100 1000 0.4 0.8 1.2 1.6 2. 0 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1000 1 10 100 operation in this area limited by r ds(on) 100s 1ms 10ms a t = 25c t = 175c single pulse c j ds -v , drain-to-source voltage (v) d -i , drain current (a)
irfr/u5305pbf www.kersemi.com 5 fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f + - 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irfr/u5305pbf 6 www.kersemi.com fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -10v d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0 100 200 300 400 500 600 700 25 50 75 100 125 150 17 5 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) v = -25v i top -6.6a -11a bottom -16a dd d fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v d d driver a -20v 15v
irfr/u5305pbf www.kersemi.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity for p-channel ** use p-channel driver for p-channel measurements v gs * *** v gs = 5.0v for logic level and 3v drive devices fig 14. for p-channel hexfets
irfr/u5305pbf 8 www.kersemi.com

12 in the assembly line "a" as s embled on ww 16, 1999 example: with assembly this is an irfr120 lot code 1234 year 9 = 199 9 dat e code we e k 16 part number logo internat ional rectifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = designates lead-free product (opt ional) note: "p" in as s embly line pos ition i ndi cates "l ead- f r ee" 12 34 week 16 a = assembly site code part number irf u120 line a logo lot code assembly int ernational rectifier
irfr/u5305pbf www.kersemi.com 9

as s e mb l y example: wit h as s e mb l y this is an irfu120 year 9 = 199 9 dat e code line a week 19 in the ass embly line "a" as s e mbled on ww 19, 1999 lot code 5678 part number 56 irfu120 international logo rectifier lot code 919a 78 note: "p" in as s embly line position indicates "lead-free" 56 78 as s e mb l y lot code rectifier logo international irf u120 part number we e k 19 dat e code year 9 = 1999 a = as s e mb l y s i t e code p = de s ignat es lead-f ree product (opt ional)
irfr/u5305pbf 10 www.kersemi.com

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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